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13 November 1980 Performance Characteristics Of Diffused Junction Silicon Photodiodes
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Proceedings Volume 0190, Los Alamos Conference on Optics 1979; (1980) https://doi.org/10.1117/12.957771
Event: Los Alamos Conference on Optics '79, 1979, Los Alamos, United States
Abstract
Two of the basic types of diffused junction silicon photodiodes are the n/p diode (which can be operated in either a partially-depleted or fully-depleted mode) and the p/n diode (which is usually operated in the unbiased mode). These two types of diodes are illustrated in Figure 1. While both diodes convert incident photons to electrical current by the same process they exhibit entirely different operating and performance characteristics which determine their suitability for particular applications. Several of these characteristics are reviewed below.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. D. Major Jr., R. W. Olmsted, and R. R. Kusner "Performance Characteristics Of Diffused Junction Silicon Photodiodes", Proc. SPIE 0190, Los Alamos Conference on Optics 1979, (13 November 1980); https://doi.org/10.1117/12.957771
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