Paper
12 July 1993 Design and electro-optical characterization of a 1024 x 1024 imager
Stacy R. Kamasz, William D. Washkurak, Gareth P. Weale, Shing-Fat Fred Ma, Charles R. Smith, Savvas G. Chamberlain
Author Affiliations +
Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148593
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States
Abstract
Large format charge coupled device area arrays (1 million pixels or more) have proven to be useful in scientific, medical and industrial imaging applications. DALSA has developed a 1024 X 1024 pixel single output, full-frame area array incorporating 3-poly 3-phase buried channel NMOS CCD shift registers and a 10 micrometers X 10 micrometers pixel pitch. The device was fabricated with an additional buried channel implant (notch) in the pixel columns to increase charge storage capacity. In this paper the authors discuss the design and initial performance evaluation of the device. Preliminary measurements of the pixel charge storage capacity indicate 70,000 e- without notch and 140,000 e- with notch. The results indicate that the sensor should be suitable for a variety of applications such as high resolution machine vision, still photography, and scientific imaging.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stacy R. Kamasz, William D. Washkurak, Gareth P. Weale, Shing-Fat Fred Ma, Charles R. Smith, and Savvas G. Chamberlain "Design and electro-optical characterization of a 1024 x 1024 imager", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148593
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Charge-coupled devices

Clocks

Capacitance

Electro optical design

Imaging systems

Resistance

Amplifiers

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