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12 July 1993 Electron bombardment radiation damage in Tektronix CCDs
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Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148591
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States
Abstract
Radiation hardness is critical for charge coupled devices used in the electron bombarded mode. Two types of damage in CCDs are caused by keV electron irradiation: a flatband voltage shift and an increase in interface state density. A flatband voltage shift is more catastrophic to device performance than an increase in interface state density, especially for MPP devices. The type of radiation damage a CCD is susceptible to depends on the process used to fabricate it. Results are presented which show that Tektronix CCDs fabricated with a straight silicon dioxide gate insulator exhibit an increase in interface state density but little if any flatband voltage shift.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alice L. Reinheimer "Electron bombardment radiation damage in Tektronix CCDs", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148591
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