Implications of a thinned CCD QE model

James S. Flores

doi:10.1117/12.148609

12 July 1993 Implications of a thinned CCD QE model

James S. Flores

Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148609
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

A thinned CCD QE model derived by Morley Blouke provided more than an estimation of quantum efficiency. The derivation of the model also produced charge flux equations in the direction normal to the imaging surface. First, these equations were converted into velocity expressions and subsequently into velocity profiles along the normal axis. Such profiles are excellent tools for visualizing the charge collection dynamics as a function of device structure. Profile by-products include dark layer thickness and speed of response (collection). The latter characteristic essentially constrains transverse charge spread. A simple random walk model was created in order to evaluate the extent of this spread in terms of radial rms distances. This distance is a measure of point resolution and is expressed as a function of CCD design and incident wavelength. The theoretical radius of charge spread from a point source ranges from about 3 micrometers for near-IR to about 20 micrometers for near-UV light. This article also discusses justifications for the model, although the final justification must wait for funding of experimental work.

Citation Download Citation

James S. Flores "Implications of a thinned CCD QE model", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148609

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KEYWORDS

Charge-coupled devices

Quantum efficiency

Chlorine

Electro optical modeling

Silicon

Photons

Absorption

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