Impact of chuck flatness on wafer distortion and stepper overlay

Klaus Simon; H.-U. Scheunemann; Hans L. Huber; F. Gabeli

doi:10.1117/12.146510

24 June 1993 Impact of chuck flatness on wafer distortion and stepper overlay

Klaus Simon, H.-U. Scheunemann, Hans L. Huber, F. Gabeli

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146510
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Overlay accuracy is known as one of the most important subjects for ULSI device production. Significant contributions such as alignment accuracy and mask distortions are well known. By breaking the 100 nm range on overlay accuracy a number of influences have to take into account, which were usually neglected for relaxed design rules. One of these influences to the overlay is directly related to wafer distortions induced by flatness deviations of wafer chucks. This impact was characterized by investigating the elastic behavior of 4' wafers (525 micrometers thick), fixed on a wafer chuck. Induced elastical deformation due to flatness error of the chuck causes strains and elongations in the wafer surface and therefore wafer distortions. The results obtained by exposure experiments and calculations show that even a point size defect has a 30 mm spreading. Therefore the induced distortions arrives about 100 nm in case of a 3 micrometers flatness irregularity. The final result of the investigations induces that the flatness differences between different wafer chucks or steppers should be smaller than 1 micrometers for design rules below quarter micron.

Citation Download Citation

Klaus Simon, H.-U. Scheunemann, Hans L. Huber, and F. Gabeli "Impact of chuck flatness on wafer distortion and stepper overlay", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146510

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