Paper
24 June 1993 Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization
Jeffrey M. Calvert, Tim S. Koloski, Walter J. Dressick, Charles S. Dulcey, Martin C. Peckerar, Franco Cerrina, James Welch Taylor, Doowon Suh, Obert R. Wood II, Alastair A. MacDowell, Raissa M. D'Souza
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Abstract
Soft x-ray synchrotron radiation, of wavelength 14 nm, has been used to pattern self- assembled monolayer films, which were then selectively metallized using electroless deposition. Organosilane precursors of the general type RSiX3 (R equals organic functional group; X equals Cl, OCH3) are used to form covalently bound ultrathin films by molecular self-assembly on Si wafers. These films are approximately one monolayer (approximately 1 nm) thick. X-ray exposure was used to remove or transform the R groups in selected areas of the film. The laterally patterned reactivity on the surface was then used as a template for the additive deposition of a thin layer of electroless nickel in the unexposed regions. The Ni metal layer can then be used as a plasma etch mask for pattern transfer. Metal features with linewidths to <EQ 0.25 micrometers have been produced with exposure doses of 50 mJ/cm2.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey M. Calvert, Tim S. Koloski, Walter J. Dressick, Charles S. Dulcey, Martin C. Peckerar, Franco Cerrina, James Welch Taylor, Doowon Suh, Obert R. Wood II, Alastair A. MacDowell, and Raissa M. D'Souza "Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146514
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Cited by 4 scholarly publications.
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KEYWORDS
X-rays

Metals

Electroluminescence

Semiconducting wafers

Silicon

X-ray lithography

Image processing

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