Advanced i-line lithography: evaluation of a new chemical amplification negative resist

Gilles R. Amblard; Andre P. Weill; Christophe M. Brault

doi:10.1117/12.154771

15 September 1993 Advanced i-line lithography: evaluation of a new chemical amplification negative resist

Gilles R. Amblard, Andre P. Weill, Christophe M. Brault

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154771
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A new chemical amplification negative resist for i-line lithography (XP 2068 F1 from Shipley) is evaluated. First, a process for 0.5 micrometers features is developed and optimized, using a Tagushi matrix: the compatibility of the resist absorption with the polysilicon and aluminum reflectivities is then tested, and the high thermal stability demonstrated. Second, the process latitude is evaluated in terms of dose-focus latitude, CD linearity, and PEB temperature latitude. Finally, the suitability of the resist for gate fabrication is studied: 0.5 micrometers features are transferred into polysilicon using two different plasma chemistries.

Citation Download Citation

Gilles R. Amblard, Andre P. Weill, and Christophe M. Brault "Advanced i-line lithography: evaluation of a new chemical amplification negative resist", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154771

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