Deep-UV positive-tone dry-development process using chemically amplified resist and its application to 256 Mbit DRAM

Woo-Sung Han; Joong-Hyun Lee; Jung-Chul Park; Choon-Geun Park; Hoyoung Kang; Young-Bum Koh; Moon-Yong Lee

doi:10.1117/12.154763

15 September 1993 Deep-UV positive-tone dry-development process using chemically amplified resist and its application to 256 Mbit DRAM

Woo-Sung Han, Joong-Hyun Lee, Jung-Chul Park, Choon-Geun Park, Hoyoung Kang, Young-Bum Koh, Moon-Yong Lee

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154763
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Top surface imaging and subsequent dry development were known to improve lithographic performance. Since negative working DESIRE process was introduced, several alternative methods have also been proposed. We propose a new resist system (SS-201), which is positive working in DUV lithography. We characterized this resist in view of top surface imaging (TSI) process and applied it to our 256 mega bit DRAM test device. Since conventional TSI process has a swelling problem by nature, WEBS (wet development before silylation) technique is proposed to minimize swelling. Special attention was focused on contact holes since our TSI process enables positive tone mask, which has a definite advantage in reducing potential defects in mask making.

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Woo-Sung Han, Joong-Hyun Lee, Jung-Chul Park, Choon-Geun Park, Hoyoung Kang, Young-Bum Koh, and Moon-Yong Lee "Deep-UV positive-tone dry-development process using chemically amplified resist and its application to 256 Mbit DRAM", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154763

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