Paper
15 September 1993 Effect of surface inhibition on process latitudes
Casper A. H. Juffermans, Han J. Dijkstra, Yvonne Verhulst-van Hout
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Abstract
In extending the latitudes of high-contrast positive i-line resists both bulk development contrast and surface inhibition are important. Measurements of these parameters with a DRM show large variations when the resist thickness and baking conditions are varied. The relative importance of both contributions on especially the focus latitude are studied. Using the measurements of bulk contrast and surface inhibition time our i-line resist processing is optimized.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Casper A. H. Juffermans, Han J. Dijkstra, and Yvonne Verhulst-van Hout "Effect of surface inhibition on process latitudes", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154788
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KEYWORDS
Photoresist processing

Critical dimension metrology

Semiconducting wafers

Bottom antireflective coatings

Standards development

Antireflective coatings

Coating

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