Effects of absorptive dye loading and substrate reflectivity on a 0.5-micron i-line photoresists process

Jeffrey R. Johnson; Gregory J. Stagaman; John C. Sardella; Charles R. Spinner III; Fu-Tai Liou; Peter Trefonas III; Catherine C. Meister

doi:10.1117/12.154790

15 September 1993 Effects of absorptive dye loading and substrate reflectivity on a 0.5-micron i-line photoresists process

Jeffrey R. Johnson, Gregory J. Stagaman, John C. Sardella, Charles R. Spinner III, Fu-Tai Liou, Peter Trefonas III, Catherine C. Meister

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154790
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The effects of an increasing amount of absorptive dye contained in a positive i-line photoresist were studied for a 0.5 micrometers process on two substrates with substantially different reflectivities. Parameters such as dissolution rates, focus latitudes, and resistance to reflective notching were simulated and compared to experimental results. Reductions in resist profile and focus latitude were observed as the photoresist non-bleachable absorbance was increased, and as the substrate reflectivity was decreased. It was also found that a reduction in substrate reflectivity was more effective than increasing the resist dye loading in suppressing reflective notching of the photoresist.

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Jeffrey R. Johnson, Gregory J. Stagaman, John C. Sardella, Charles R. Spinner III, Fu-Tai Liou, Peter Trefonas III, and Catherine C. Meister "Effects of absorptive dye loading and substrate reflectivity on a 0.5-micron i-line photoresists process", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154790

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