Translator Disclaimer
15 September 1993 Evaluation of a deep-UV bilayer resist for sub-half micron lithography
Author Affiliations +
A chemically amplified silicon-containing resist has been formulated and evaluated as a thin imaging layer in a positive tone deep UV (DUV) bilayer scheme. The key component is a silicon-containing polymer which has been characterized by GPC, UV, and dissolution rate studies. Dose and focus latitudes were determined for 0.4 and 0.5 micrometers patterns exposed on a SVGL Micrascan I step and scan system and on KrF excimer laser steppers. The dose latitude on a GCA (0.35 NA) excimer was found to be 20% for 0.4 micrometers features and about 30% for 0.5 micrometers features (+/- 10% CD variation). Focus latitude was at least 2 micrometers for 0.5 micrometers patterns. Wafer to wafer LW uniformity as well as within water uniformity is shown. Typical processing involves 5 - 10 mJ/cm2 exposure doses, employing a 90 degree(s)C post-expose bake (PEB) and a 60 sec 0.21 N TMAH develop. The dependence of linewidth upon PEB was found to be about 13 nm per degree C for 0.5 micrometers features. Pattern transfer into the hardbaked i-line resist underlayer was done in an MLR chamber on an AME 5000. A low pressure etch is preferred to eliminate residue but this can lead to a higher non-uniformity across the wafer. Sidewall roughness was prevalent and this could be partially attributed to `feet' on the silicon-containing imaging layer.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Brunsvold, Kevin J. Stewart, Premlatha Jagannathan, Ratnam Sooriyakumaran, J. Parrill, Karl Paul Muller, and Harbans S. Sachdev "Evaluation of a deep-UV bilayer resist for sub-half micron lithography", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993);

Back to Top