Paper
15 September 1993 Hydrosiloxane-modified styrene-diene block copolymer resists
Allen H. Gabor, Eric A. Lehner, Guoping Mao, Christopher Kemper Ober, Timothy E Long, Brian A. Schell, Richard C. Tiberio
Author Affiliations +
Abstract
Block copolymers are a class of polymers deserving of more investigation by the resist community. We are investigating styrene-hydrosiloxane modified diene block copolymers which have good properties for use as negative tone, electron sensitive resists. Resolution better than 0.1 micrometers , sensitivity of 30 (mu) C/cm2 and contrast of 2.8 have been demonstrated using a poly(styrene)-pentamethyldisiloxane modified poly(isoprene) block copolymer (PS-b-PDPI). Used in a bilayer resist scheme, PS-b-PDPI has an oxygen RIE selectivity ratio of 42 with respect to poly(imide). A poly(styrene)-heptamethyltrisiloxane modified poly(butadiene) block copolymer (PS-b-HTPB) has an oxygen RIE selectivity ratio of 54 with respect to poly(imide). In a bilayer resist system, using PS-b-PDPI as the imageable layer, patterns of 0.3 micrometers wide lines and 1.5 micrometers wide spaces have been transferred through a 1.2 micrometers thick poly(imide) planarizing layer.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Allen H. Gabor, Eric A. Lehner, Guoping Mao, Christopher Kemper Ober, Timothy E Long, Brian A. Schell, and Richard C. Tiberio "Hydrosiloxane-modified styrene-diene block copolymer resists", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154785
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KEYWORDS
Oxygen

Reactive ion etching

Silicon

Etching

Semiconducting wafers

Polymers

Resistance

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