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15 September 1993 JESSI Project E 162: status of the deep-UV resist
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Abstract
Within the joint European project `JESSI E 162' we pursue deep UV image processing for 0.35 micrometers lithography in chip production. To reach this goal, major advancements have to be made in three areas: stepper, resist, and track. In this paper, the status of the JESSI positive deep UV resist is presented. Based on the SUCCESS resist concept a stable resist process was developed. The major achievements are: linewidth stability for 0.35 micrometers lines and larger ones during delay times up to 120 min between exposure and PEB, 0.24 micrometers lines stable for 30 min, linearity down to 0.35 micrometers (NA 0.42), resolution of 0.22 micrometers with phase-shift mask (NA 0.42), and dry etch resistance better than conventional novolac resists.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dirk J. H. Funhoff, H. Binder, Han J. Dijkstra, Anne-Marie Goethals, A. Krause, Holger Moritz, Marijan E. Reuhman-Huisken, Reinhold Schwalm, Veerle Van Driessche, and Francoise Vinet "JESSI Project E 162: status of the deep-UV resist", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154784
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