Process optimization of positive novolac resists for electron-beam lithography resist characterization using single or multiple development steps with either a sodium-hydroxide or metal ion-free dev

Robert L. Dean; Gary E. Flores

doi:10.1117/12.154808

15 September 1993 Process optimization of positive novolac resists for electron-beam lithography resist characterization using single or multiple development steps with either a sodium-hydroxide or metal ion-free dev

Robert L. Dean, Gary E. Flores

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154808
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

OCG895i and Tokyo Ohka OEBR2000 (both commercially available) and two experimental resists were evaluated by experimental design. The design factors investigated included developer normality, softbake temperature, and develop time with a sodium hydroxide-based developer. The design responses included optimum dose, remaining film thickness, and dose latitude (change in critical dimension per unit dose). The best results were given by AZ141C, an experimental resist from Hoechst. At 90 degree(s)C prebaking temperature, AZ141C could be imaged at 4.0 (mu) C/cm² with good film thickness retention and dose latitude. A second set of optimization experiments was done evaluating metal ion-free developer. Finally, multiple develop processing was evaluated for improving process latitude and film thickness loss and for minimizing the dose required. A two-step process shows promise: it consists of a high initial normality develop for a short time to accomplish breakthrough of the resist surface inhibition layer, followed by a second low normality develop. Another sequence of statistically designed experiments performed to optimize this scheme and results of the optimizations are presented.

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Robert L. Dean and Gary E. Flores "Process optimization of positive novolac resists for electron-beam lithography resist characterization using single or multiple development steps with either a sodium-hydroxide or metal ion-free dev", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154808

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