Paper
15 September 1993 Statistical experimental design on the optimization of high-performance photoresist
Stanley A. Ficner, Ping-Hung Lu, Thomas Kloffenstein, Hans-Joachim Merrem
Author Affiliations +
Abstract
The ultimate photolithographic performance of a photoresist is essentially determined by the nature and relative concentration of the chemical components in the formulation and the process conditions selected. To meet the stringent performance requirements demanded by the advanced microlithography technology, each individual constituent of the photoresist process described must be optimized simultaneously. This study presents an effective and time saving approach using experimental design techniques to address the complicated multi-variable of resist formulation and process condition optimization. The responses for the design experiment in terms of lithographic performance were: exposure and focus latitude, photosensitivity and resist pattern thermal flow temperature are correlated with the resin dissolution characteristics, relative photosensitizer concentration, pre- and postexposure bake temperatures and development time.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanley A. Ficner, Ping-Hung Lu, Thomas Kloffenstein, and Hans-Joachim Merrem "Statistical experimental design on the optimization of high-performance photoresist", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154799
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KEYWORDS
Photoresist materials

Photoresist developing

Picture Archiving and Communication System

Lithography

Optimization (mathematics)

Semiconducting wafers

Data modeling

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