Integrated circuit wafer reflectivity measurement in the UV and DUV and its application for ARC characterization

Bhanwar Singh; Sesh Ramaswami; Warren Lin; Nagesh Avadhany

doi:10.1117/12.149012

4 August 1993 Integrated circuit wafer reflectivity measurement in the UV and DUV and its application for ARC characterization

Bhanwar Singh, Sesh Ramaswami, Warren Lin, Nagesh Avadhany

Author Affiliations +

Proceedings Volume 1926, Integrated Circuit Metrology, Inspection, and Process Control VII; (1993) https://doi.org/10.1117/12.149012
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Linewidth control over reflective topography has become a major problem in sub-half micron optical lithography. Reflective notching and thin film interference are the major contributors to linewidth variation. In this paper, we examined a simple and practical approach to characterize photoresist swing curve and anti-reflecting coating materials using reflectance measurements. An optimization of titanium nitride (TiN) anti-reflecting coating (ARC) thickness for G-line, I- line and DUV wavelengths was also examined for aluminum substrates. Aluminum film reflectivity shows a correlation with surface roughness and reflectance measurement technique can be utilized to monitor thin films.

Citation Download Citation

Bhanwar Singh, Sesh Ramaswami, Warren Lin, and Nagesh Avadhany "Integrated circuit wafer reflectivity measurement in the UV and DUV and its application for ARC characterization", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.149012

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