Improvement of the physical-optics approximation for topography simulation in optical lithography

Michael S. Yeung; Andrew R. Neureuther

doi:10.1117/12.150480

8 August 1993 Improvement of the physical-optics approximation for topography simulation in optical lithography

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150480
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

This paper discusses various techniques to implement the physical-optics approximation for topography simulation. The accuracies of the various techniques are examined by comparison with the results of a rigorous, time- domain method. It is shown that inter-surface multiple scattering effects and near-field diffraction effects in intra-surface multiple scattering must both be taken into account to obtain satisfactory agreement with the time-domain method. A technique to correct for the effects of non-physical-optics edge currents is also described.

Citation Download Citation

Michael S. Yeung and Andrew R. Neureuther "Improvement of the physical-optics approximation for topography simulation in optical lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150480

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