Negative deep-UV processes for CMOS and EPROM devices: performances and limits

Francoise Vinet; Thierry Mourier; Fabienne Baudru; Charles Le Cornec; Michel Lerme; Bernard Guillaumot; Michel Laurens

doi:10.1117/12.150473

8 August 1993 Negative deep-UV processes for CMOS and EPROM devices: performances and limits

Francoise Vinet, Thierry Mourier, Fabienne Baudru, Charles Le Cornec, Michel Lerme, Bernard Guillaumot, Michel Laurens

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150473
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The new microelectronics devices' generations require an increase in resolution down to 0.35 micrometers . For this purpose, deep UV lithography appears to be a good candidate. Excimer laser deep UV steppers have matured to a production worthy state. Up to now, commercially available deep UV resists were negative toned. Consequently, we have investigated the performances and the limits of negative toned deep UV resists, XP89131 and died versions such as XP90166, all from Shipley. This investigation has been performed, using an ASM 5000/70 stepper, on different levels for two types of devices: (1) gate level for 0.35 micrometers CMOS, and (2) poly 1, poly 2, and metal levels for 64 Mbit EPROM. Optimized process conditions are presented. The performances of these processes as well as their limits are discussed as a function of material and topography. Moreover, electrical results are compared to lithographic results.

Citation Download Citation

Francoise Vinet, Thierry Mourier, Fabienne Baudru, Charles Le Cornec, Michel Lerme, Bernard Guillaumot, and Michel Laurens "Negative deep-UV processes for CMOS and EPROM devices: performances and limits", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150473

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KEYWORDS

Deep ultraviolet

Lithography

Photoresist processing

Reactive ion etching

Aluminum

Coating

Critical dimension metrology

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