New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination

Rainer Pforr; Rik M. Jonckheere; Wolfgang Henke; Kurt G. Ronse; Patrick Jaenen; Ki-Ho Baik; Luc Van den Hove

doi:10.1117/12.150424

8 August 1993 New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination

Rainer Pforr, Rik M. Jonckheere, Wolfgang Henke, Kurt G. Ronse, Patrick Jaenen, Ki-Ho Baik, Luc Van den Hove

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150424
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A new technique has been developed for the illumination of a mask in a wafer stepper. A phase-shifting layer (a so-called kinoform) is introduced in the optical path of the projection system between the last lens of the illumination system and the mask absorber. This phase- layer interacts with the incident light in such a way, that the features on the mask get a specific optimized illumination. Therefore the phase distribution has to be generated under consideration of the feature size and distribution on the mask. In that sense a mask feature customized illumination is obtained. In a first application phase, the phase layer is created on the glass side of the mask. Linear as well as chessboard phase gratings are applied. With a chessboard phase grating, a quadrupole-like illumination is generated, which can be optimized to the mask feature distribution by choosing the correct grating frequency, phase-shift and tilt.

Citation Download Citation

Rainer Pforr, Rik M. Jonckheere, Wolfgang Henke, Kurt G. Ronse, Patrick Jaenen, Ki-Ho Baik, and Luc Van den Hove "New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150424

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