Process-induced wafer distortion: its measurement and effects on overlay in stepper-based advanced lithography

Giovanni Rivera; Paolo Canestrari

doi:10.1117/12.150477

8 August 1993 Process-induced wafer distortion: its measurement and effects on overlay in stepper-based advanced lithography

Giovanni Rivera, Paolo Canestrari

Author Affiliations +

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150477
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The distortion introduced by some manufacturing steps on wafers can sometimes have a strong effect on overlay results. Thermal processes, for example, can introduce wafer distortions that cannot be completely compensated by the stepper alignment system with a consequent degradation in overlay. A new methodology which can measure the process induced distortion on wafers (exposed with a stepper system) at different steps in a standard process flow has been developed and is described in this paper. This method does not require any external metrology instruments apart from a standard precision stepper and the method is compatible with all process layers. Experimental results of application of the method on manufacturing process are presented.

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Giovanni Rivera and Paolo Canestrari "Process-induced wafer distortion: its measurement and effects on overlay in stepper-based advanced lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150477

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