Study of excimer-laser direct-projective lithography

Haixing Zou; Yudong Zhang

doi:10.1117/12.150489

8 August 1993 Study of excimer-laser direct-projective lithography

Haixing Zou, Yudong Zhang

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150489
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

In our experiments, we have found that the velocity of direct projective lithography is very fast, if excimer laser is used. In the system, we use an XeCl excimer laser (laser wavelength 308 nm, laser bandwidth 1 nm, pulse width 40 ns, and pulse energy 300 mJ/pulse) and a 1:1 catadioptric lens used as the projective lens (with NA: 0.35, field size: 40 mm). Optical resist is AZ 1350 J. The laser energy density on the wafer is 6 mJ/cm². Exposure dose is 300 mJ/cm². Through the system, we have not only obtained 1.0 micrometers resolution on 0.6 micrometers thickness resist, but also have studied the damage of Cr film in the direct projective lithography.

Citation Download Citation

Haixing Zou and Yudong Zhang "Study of excimer-laser direct-projective lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150489

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