Paper
15 November 1993 Low-light-level image sensor with on-chip signal processing
Sunetra K. Mendis, Bedabrata Pain, Robert H. Nixon, Eric R. Fossum
Author Affiliations +
Abstract
The design of a low-light-level CMOS active-pixel-sensor (APS) with on-chip, semi-parallel analog-to-digital (A/D) conversion is presented. The imager consists of a 128 X 128 array of active pixels at a 50 micrometers pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta ((Sigma) -(Delta) ) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 10 e- rms noise performance. A 28 X 28 active-pixel-sensor (APS) with 40 X 40 micrometers 2 pixels as well as individual elements of the sigma-delta modulator have been fabricated and tested using MOSIS* 2 micrometers CMOS technology.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sunetra K. Mendis, Bedabrata Pain, Robert H. Nixon, and Eric R. Fossum "Low-light-level image sensor with on-chip signal processing", Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); https://doi.org/10.1117/12.161419
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Modulators

Amplifiers

Capacitors

Modulation

Transistors

Sensors

Clocks

RELATED CONTENT


Back to Top