Quaternary laser devices: history and state of the art

Petr Georgievich Eliseev

doi:10.1117/12.144147

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11 May 1993 Quaternary laser devices: history and state of the art

Petr Georgievich Eliseev

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Proceedings Volume 1979, 1992 International Conference on Lasers and Optoelectronics; (1993) https://doi.org/10.1117/12.144147
Event: 1992 International Conference on Lasers and Optoelectronics, 1992, Bejing, China

Abstract

Quaternary alloys of semiconductor compounds are suitable materials for wide-spectrum optoelectronic applications. The most important property of these efficient luminescent materials is the opportunity to fit the lattice parameter in some range to a given value corresponding to another crystalline material. This leads to the method to construct defect-free and stress-free heterojunctions, which was used for the preparation of a number of laser and LED devices. Quaternaries of InGaAsP, InGaSbAs, InSbAsP, PbSnTeSe, and other alloys were introduced into practical usage particularly in diode laser devices. The alloy InGaAsP appears to be one of the most widely used in optoelectronic applications at present as it covers ranges near 1.3 and 1.55 micrometers wavelengths of fiber-optic communication. For the spectral range near 2 micrometers the alloy InGaSbAs seems to be most attractive, and cw-operating diode lasers at room temperature were demonstrated at 2.0 - 2.4 micrometers . The alloy PbSnTeSe was used to obtain a longest wave of diode laser emission 46 micrometers . Quaternaries played an important role in the development of the semiconductor optoelectronics during the last two decades.

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Petr Georgievich Eliseev "Quaternary laser devices: history and state of the art", Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); https://doi.org/10.1117/12.144147

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