Thin-film high-gain photodetector and switching devices using a-Si:H and a-SiC:H multilayers

Yoshinori Hatanaka; Narihiro Morosawa; Masakazu Suzuki; Yoichiro Nakanishi

doi:10.1117/12.142000

1 April 1993 Thin-film high-gain photodetector and switching devices using a-Si:H and a-SiC:H multilayers

Yoshinori Hatanaka, Narihiro Morosawa, Masakazu Suzuki, Yoichiro Nakanishi

Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.142000
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China

Abstract

High quality amorphous silicon carbon (a-SiC:H) films with the wide bandgap of 2.4 eV are developed by using rf glow discharge deposition from highly hydrogen diluted C₂H₄ and SiH₄. It has been shown that multi-layer photo-diodes using a-Si:H and a-SiC:H tend to have higher gain than 10, and special constructions of three multi-layers presented switching phenomena like a thyrister switch.

Citation Download Citation

Yoshinori Hatanaka, Narihiro Morosawa, Masakazu Suzuki, and Yoichiro Nakanishi "Thin-film high-gain photodetector and switching devices using a-Si:H and a-SiC:H multilayers", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); https://doi.org/10.1117/12.142000

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available