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19 November 1993 Dark current mechanism and the cause of the current-voltage asymmetry in quantum-well intersubband photodetectors
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162783
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Recent research activity in the long wavelength infrared spectral region has been driven by the wide range of possible applications for optoelectronic systems and by the wealth of new physical phenomena displayed by quantum well intersubband-based devices. GaAs-AlGaAs quantum well intersubband photodetectors are currently under intense research investigation, and promise to have a wide range of application. Here we first present a microscopic model of the detector dark current, which provides new physical insights into the mechanism of carrier transport in multiple quantum well structures. Systematic experiments have been carried out to compare with the model, and good agreement between theory and experiments is obtained. The model is based on considering the details of the carrier trapping and emission from quantum wells.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Chun Liu, Alan G. Steele, Zbigniew R. Wasilewski, and Margaret Buchanan "Dark current mechanism and the cause of the current-voltage asymmetry in quantum-well intersubband photodetectors", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162783
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