Electro-optical modulation in silicon-silicon/germanium quantum-well structures

Lionel R. Friedman; Richard A. Soref

doi:10.1117/12.162773

19 November 1993 Electro-optical modulation in silicon-silicon/germanium quantum-well structures

Lionel R. Friedman, Richard A. Soref

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162773
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

A new, fast, intersubband 1.55 micrometers electro-optic modulator in the SiGe/Si/CaF₂-on- Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +/- 8 V/micrometers , resonant 1 - 3 conduction-intersubband absorption is predicted to given 18 dB of optical extinction for narrow-linewidth transitions. The procedure for incorporating conduction band nonparobolicity for higher lying subbands is described, and the issue of narrow linewidths is discussed.

Citation Download Citation

Lionel R. Friedman and Richard A. Soref "Electro-optical modulation in silicon-silicon/germanium quantum-well structures", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162773

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