Investigation of strain relaxation in short-period SimGen superlattices using reciprocal space mapping

E. Koppensteiner; P. Hamberger; Guenther E. Bauer; Horst Kibbel; Hartmut Presting; Erich Kasper; Andreas Pesek

doi:10.1117/12.162744

19 November 1993 Investigation of strain relaxation in short-period Si_mGe_n superlattices using reciprocal space mapping

E. Koppensteiner, P. Hamberger, Guenther E. Bauer, Horst Kibbel, Hartmut Presting, Erich Kasper, Andreas Pesek

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162744
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

The optoelectronic properties of ultrathin Si_mGe_n strained layer superlattices (SLSs) depend strongly on their structural perfection and the strain adjustment of the SLS by a Si_1-xGe_x alloy buffer. We used double crystal and triple axis x-ray diffractometry to characterize the structural properties of short period Si₆Ge₄ and Si₉Ge₆ SLSs grown on about 1 micrometers thick step-graded SiGe alloy buffers. As grown SLSs and samples annealed subsequently at 550 degree(s)C, 650 degree(s)C, and 780 degree(s)C for 60 min were investigated, the latter to study effects of post-growth thermal treatments typical for conventional Si device fabrication. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. These data were used as refined input parameters for the dynamical simulation of the integrated intensity along the q[004] direction.

Citation Download Citation

E. Koppensteiner, P. Hamberger, Guenther E. Bauer, Horst Kibbel, Hartmut Presting, Erich Kasper, and Andreas Pesek "Investigation of strain relaxation in short-period Si_mGe_n superlattices using reciprocal space mapping", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162744

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