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12 November 1993 Performance analysis of cryogenic silicon Laue monochromators at APS undulators
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Abstract
We investigated the performance of a cryogenically cooled silicon monochromator crystal exposed to high power x-ray undulator radiation. The heat transfer in this nonlinear material was studied analytically by approximating the thermal conductivity and then scaling relations for the temperature distributions with the cooling temperature and the power load were found. The strain distributions in this nonlinear material were studied analytically by approximating the thermal expansion coefficient. The broadening of the rocking curve was found to be determined, to the first order, by the maximum temperature and a load factor (gamma) which is determined by the properties of the source and the crystal, and independent of the optical geometry. Major conclusions were verified through numerical analysis with the program ANSYS. We concluded that cryogenically cooled silicon Laue monochromator should work with Undulator A at the Advanced Photon Source.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bingxin X. Yang, Mati Meron, Yifei Ruan, and Wilfried Schildkamp "Performance analysis of cryogenic silicon Laue monochromators at APS undulators", Proc. SPIE 1997, High Heat Flux Engineering II, (12 November 1993); https://doi.org/10.1117/12.163808
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