Paper
3 September 1993 High-throughput projection electron-beam lithography employing SCALPEL
James Alexander Liddle, Steven D. Berger
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Abstract
Projection electron beam lithography employing the SCALPEL (scattering with angular limitation projection electron beam lithography) technique appears to be a potential successor to optical lithography for linewidths below 0.25 micrometers . An examination of previous projection electron-beam systems reveals that their lack of success was due to a combination of factors. The most significant of these were the lack of a suitable mask, and the use of an architecture mimicking optical tools. SCALPEL lifts the restrictions on operating voltage imposed by the absorbing stencil masks used previously. Consideration of the tool design from the system perspective suggests that a more fruitful approach to the problem is the use of a step-and-scan architecture. This employs dynamically corrected optics, and takes advantage of the ability of charged particles to be manipulated in an effectively inertialess manner. This obviates the need to produce a full-field projection optic, and also allows for correction of the printed image to compensate for chip-site distortions.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Alexander Liddle and Steven D. Berger "High-throughput projection electron-beam lithography employing SCALPEL", Proc. SPIE 2014, Charged-Particle Optics, (3 September 1993); https://doi.org/10.1117/12.155703
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Lithography

Charged-particle lithography

Projection systems

Semiconducting wafers

Wafer-level optics

Image segmentation

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