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22 October 1993 Optimization of the electrical and optical properties of ITO layers deposited by magnetron sputtering
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A comprehensive investigation of the deposition parameters of In2O3:Sn films on Corning 7059 glass substrates using r.f. planar magnetron sputtering has lead to the production of films with sheet resistance < 1.5 ohms per square, an integrated luminous transmittance of approximately 77% and an integrated solar transmittance of approximately 54%. Films characterized by measurement of their resistivity and Hall coefficient show a distinct minimum in film resistivity with deposition rate, substrate temperature, oxygen partial pressure, total deposition pressure and target composition. Results are presented showing the variation in carrier concentration and carrier mobility as a function of the deposition parameters together with the optical properties and microstructure of films with a resistivity approaching 10-4 (Omega) cm. Potentially, films with these properties can be used for energy efficient window applications. The results indicate that it should be possible to industrially produce large area ITO for electrochromic windows with sufficiently low sheet resistance coupled with high visible transmittance.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geoff Cochrane, Zhitao Zheng, and Geoffrey B. Smith "Optimization of the electrical and optical properties of ITO layers deposited by magnetron sputtering", Proc. SPIE 2017, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XII, (22 October 1993);

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