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1 November 1993 640 x 480 Mwir HgCdTe FPA
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Abstract
A high performance 640 X 480 focal plane array has been developed for the 1 - 5 micron band with excellent sensitivity at temperatures below 120 K. The detectors are processed on 2' or 3' diameter PACE-I (producible alternative to CdTe for epitaxy) HgCdTe material. The multiplexer is a direct injection input, switched-FET device with four independent quadrants. The detector is hybridized to the multiplexer through indium columns and is characterized. A mean camera NE(Delta) T (noise equivalent temperature difference) of 13 mK has been achieved for temperatures <EQ 120 K. Background-limited (BLIP) D* of 1 X 1012 Jones (cm-(root)Hz/W) has been measured for 1014 phs/cm2-s background at 95 K. The hybrids have been thermally cycled for 15 times with no interconnect loss. Interconnect yields as high as 99.3% have been achieved.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski, Robert B. Bailey, and Kadri Vural "640 x 480 Mwir HgCdTe FPA", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); https://doi.org/10.1117/12.160562
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