Advanced infrared photonic devices based on HgMnTe

Piotr Becla

doi:10.1117/12.164946

7 December 1993 Advanced infrared photonic devices based on HgMnTe

Piotr Becla

Proceedings Volume 2021, Growth and Characterization of Materials for Infrared Detectors; (1993) https://doi.org/10.1117/12.164946
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

This review is oriented toward practical technological aspects of growth and applications of narrow bandgap semimagnetic semiconducting HgMnTe alloys. It summarizes recent achievements in crystal growth, device fabrication, and device characterization. Current work is focused on analyses of the growth process, approaches for the achievement of improved composition uniformity, the relationship between material properties and device performance, a comparison of performance of HgMnTe and HgCdTe devices, and new magnetic exchanged- based IR devices.

Citation Download Citation

Piotr Becla "Advanced infrared photonic devices based on HgMnTe", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164946

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