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7 December 1993 Recent advances in the metalorganic molecular beam epitaxy of HgCdTe
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Abstract
A brief review is given of recent results to assess the capability of metalorganic molecular beam epitaxy for the low-temperature growth of high-quality low-carrier-concentration CdTe and HgCdTe alloys. In particular, studies of this technique to produce highly uniform HgCdTe material and the extension of the gas source doping of CdTe and HgCdTe with ethyliodide so as to obtain back-doped electron concentrations from 1015 to 1018 cm-3 are reported. Some preliminary results on the growth of ternary CdTe/HgCdTe superlattices and the p-type doping of CdTe with As will also be presented. The electrical and optical properties of these materials were determined by resistivity and Hall effect, photoluminescence, and IR transmission measurements between 300 and 10 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher J. Summers, Brent K. Wagner, and Rudolph G. Benz II "Recent advances in the metalorganic molecular beam epitaxy of HgCdTe", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164950
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