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13 August 1993 Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering
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Proceedings Volume 2053, Optical Storage (ISOS '92); (1993)
Event: Optical Storage: Third International Symposium, 1992, Kunming, Yunnan Province, China
A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fusong S. Jiang, Yu Chen, Chuanxing Zhu, Moguang Jiang, and Fuxi Gan "Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering", Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993);

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