Paper
15 February 1994 Continous phase transitions fabricated by subtractive process
Taro Saito, Hideyuki Jinbo, Katsuhiro Takushima, Itsuji Ashida, Yoshio Tanaka
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Abstract
An unexpected resist pattern due to the phase transition at the shifter edge is one of the problems for applying phase shifting masks. We have developed a novel subtractive process with a wet-etching technique. By using a controlled conventional resist process with some modifications, a gradually sloped shifter edge over 2 micrometers wide was produced when the quartz substrate was etched to 380 nm for a 180 degree(s) phase shift. By this etching process, the quartz covered with the chrome becomes only a 380 nm undercut and this chrome edge was durable during the physical cleaning process. This fabricated mask could easily provide 0.3 micrometers L/S patterns on the wafer with 160 mJ/cm2 on i-line stepper and the unexpected resist patterns totally disappeared at 110 mJ/cm2 and higher doses.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taro Saito, Hideyuki Jinbo, Katsuhiro Takushima, Itsuji Ashida, and Yoshio Tanaka "Continous phase transitions fabricated by subtractive process", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); https://doi.org/10.1117/12.167281
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KEYWORDS
Photomasks

Quartz

Phase shifting

Phase shifts

Etching

Photomicroscopy

Reticles

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