Practical approach to 0.35-um i-line lithography

Etsuya Morita

doi:10.1117/12.167283

15 February 1994 Practical approach to 0.35-um i-line lithography

Etsuya Morita

Author Affiliations +

Proceedings Volume 2087, 13th Annual BACUS Symposium on Photomask Technology and Management; (1994) https://doi.org/10.1117/12.167283
Event: 13th Annual BACUS Symposium on Photomask Technology and Management, 1993, Santa Clara, CA, United States

Abstract

LithoGraph^TM, a PC-based lithography simulation software package developed by Etec Systems, is examined for its ability to be a useful tool in lithography process development. We evaluated conventional binary masks, attenuated phase shift masks (PSMs), alternate PSMs, and quadrupole illumination techniques at varying stepper parameters. As boundary conditions for the optimization, we considered image contrast, exposure-defocus latitude, exposure dose level, and optical proximity corrections. To quantify the extent of optical proximity effects, we calculated the overall exposure latitude by overlapping exposure-defocus diagrams generated at various pattern pitches.

Citation Download Citation

Etsuya Morita "Practical approach to 0.35-um i-line lithography", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); https://doi.org/10.1117/12.167283

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