Simulations of metallization uniformity from large planar sputtering targets

Fred Bouchard; W. A. Manring

doi:10.1117/12.156528

15 September 1993 Simulations of metallization uniformity from large planar sputtering targets

Fred Bouchard, W. A. Manring

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156528
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Advanced sputtering equipment performance is affected by numerous system parameters. In this work, the effect of target crystallographic orientation, grain size, atomic channeling, and gas scattering have been incorporated into Monte Carlo computer simulations of advanced planar sputtering systems. A grid of polygons was created over the target area by the computer program. Each polygon of the grid represented an individual grain with a discrete crystal orientation. Crystallographic orientation distribution function (ODF) files were obtained for a number of polycrystalline targets through pole figure x ray analysis and harmonic texture analysis. The ODF files were used to assign discrete crystal orientations to each polygon. The program simulated the sputtering process by choosing a location on the target, based on the depth profile of a sputtered target and finally calculating the sputtered atom emission angles from the crystal orientation of that grain.

Citation Download Citation

Fred Bouchard and W. A. Manring "Simulations of metallization uniformity from large planar sputtering targets", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156528

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