Characterization of organometallic polymers generated post-RIE/ECR etching followed by in-situ microwave ashing

Debbie Switalski; Randy Solis

doi:10.1117/12.167349

15 February 1994 Characterization of organometallic polymers generated post-RIE/ECR etching followed by in-situ microwave ashing

Debbie Switalski, Randy Solis

Author Affiliations +

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167349
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

As the technology of semiconductor devices continues to evolve to smaller geometries and increased circuit densities, it has become necessary to rely upon Reactive Ion Etch techniques for final pattern definition. For this study, a metal stack of TiW/AlCu/TiW is ECR etched, generating a polymer which can be characterized as follows: both carbon and nitrogen are present due to residual photoresist components; and trace amounts of TiW and Cu are present due to back-sputtering during ECR. Together the representative elements comprise an organo-metallic polymer. After ECR etching, the organo-metallic polymer is subjected to increased cycle times of in-situ microwave ashing. As the cycle times increase, the amount of inorganic residue increase proportionally, and is measured as the amount of elemental oxygen present on the substrate surface.

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Debbie Switalski and Randy Solis "Characterization of organometallic polymers generated post-RIE/ECR etching followed by in-situ microwave ashing", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167349

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