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22 September 1993 Porous silicon photodetector
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Proceedings Volume 2101, Measurement Technology and Intelligent Instruments; (1993)
Event: Measurement Technology and Intelligent Instruments, 1993, Wuhan, China
The porous silicon photodetector shows high band and high sensitivity properties. The porous silicon layer being the top layer of porous silicon photodetector, and the pore size distribution of porous silicon result in high band detectivity. Various porosities corresponding to various silicon wires would respond to various wavelengths of incident light.The high sensitivity is attributed to the textured surface, the direct band of porous silicon and the porous silicon layer thickness controllability of absorption region of metal-PS-silicon photodetector. The textured surface of porous silicon would reduce the reflection of incident light which would enhance the sensitivity of porous silicon photodetector.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming Kwei Lee, K. R. Peng, and C. H. Chu "Porous silicon photodetector", Proc. SPIE 2101, Measurement Technology and Intelligent Instruments, (22 September 1993);

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