Probability of bound electron-hole pair disassociation in holographic recording media based on amorphous molecular semiconductors film

M. A. Zabolotny; N. P. Borolina

doi:10.1117/12.165380

10 December 1993 Probability of bound electron-hole pair disassociation in holographic recording media based on amorphous molecular semiconductors film

M. A. Zabolotny, N. P. Borolina

Author Affiliations +

Proceedings Volume 2108, International Conference on Holography, Correlation Optics, and Recording Materials; (1993) https://doi.org/10.1117/12.165380
Event: Holography, Correlation Optics, and Recording Materials, 1993, Chernivsti, Ukraine

Abstract

This study is dedicated to theoretical definition of the probability of bound electron-hole pair dissociation (phi) in strong electric fields (E > kT/(beta) , where k is the Boltzman constant, T is the temperature, and (beta) is the Poole-Frenkel constant) in the films of amorphous molecular semiconductors.

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M. A. Zabolotny and N. P. Borolina "Probability of bound electron-hole pair disassociation in holographic recording media based on amorphous molecular semiconductors film", Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); https://doi.org/10.1117/12.165380

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