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28 July 1994 Color centers in lead-silicate glasses and their influence on accumulation effect
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The accumulation effect under multi-photon generation of color centers at 532 nm has been investigated in lead silicate glasses. The mechanism of excitation and color centers formation has been studied. It was founded that a long-wave carriers mobility boundary (minimal energy at which there takes place generation of electron-hole pairs) is disposed much above (> 5.6 eV) a fundamental absorption edge of the glass matrix (approximately 3.5 eV). Excitation occurs through virtual levels located in the fundamental absorption region as a result of the three-photon process. Dependency of the accumulation effect on the color centers generation efficiency and its concentration is studied. It is shown that existing models based on multi- photon accumulation of color centers can not account for the observed regularities. In the work possible mechanisms of under study phenomena are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. N. Bosyi, Oleg M. Efimov, Yurii A. Matveev, and Andrei M. Mekryukov "Color centers in lead-silicate glasses and their influence on accumulation effect", Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994);

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