Color centers in lead-silicate glasses and their influence on accumulation effect

O. N. Bosyi; Oleg M. Efimov; Yurii A. Matveev; Andrei M. Mekryukov

doi:10.1117/12.180931

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28 July 1994 Color centers in lead-silicate glasses and their influence on accumulation effect

O. N. Bosyi, Oleg M. Efimov, Yurii A. Matveev, Andrei M. Mekryukov

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Proceedings Volume 2114, Laser-Induced Damage in Optical Materials: 1993; (1994) https://doi.org/10.1117/12.180931
Event: Laser-Induced Damage in Optical Materials: 1993, 1993, Boulder, CO, United States

Abstract

The accumulation effect under multi-photon generation of color centers at 532 nm has been investigated in lead silicate glasses. The mechanism of excitation and color centers formation has been studied. It was founded that a long-wave carriers mobility boundary (minimal energy at which there takes place generation of electron-hole pairs) is disposed much above (> 5.6 eV) a fundamental absorption edge of the glass matrix (approximately 3.5 eV). Excitation occurs through virtual levels located in the fundamental absorption region as a result of the three-photon process. Dependency of the accumulation effect on the color centers generation efficiency and its concentration is studied. It is shown that existing models based on multi- photon accumulation of color centers can not account for the observed regularities. In the work possible mechanisms of under study phenomena are discussed.

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O. N. Bosyi, Oleg M. Efimov, Yurii A. Matveev, and Andrei M. Mekryukov "Color centers in lead-silicate glasses and their influence on accumulation effect", Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994); https://doi.org/10.1117/12.180931

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