Paper
11 May 1994 Demonstration of extremely low switching energies using new n-i-p-i-based smart pixels
Michael Kneissl, Peter Kiesel, Peter Riel, K. Reingruber, Karlheinz H. Gulden, Stefan U. Dankowski, Erik Greger, A. Hoefler, Bernhard Knuepfer, Gottfried H. Doehler, X. X. Wu, John Stephen Smith
Author Affiliations +
Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175701
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We report on recent theoretical and experimental results on n-i-p-i based smart pixels. We present first results on dynamical switching in these devices. In particular, we present 1.9 ns switching times at an optical power of 880 (mu) W for the photoconductive switch. This corresponds to a total switching energy of 1.7 pJ or 2.4 fJ/micrometers 2 relative to the device area. A contrast of the electronic output signal larger than 107 and a maximum dc gain exceeding 106 is achieved. For an optical NOR gate -- composed of a photoconductive switch and an electroabsorptive n-i-p-i modulator -- we were able to demonstrate operation at optical switching energies of 2 pJ and switching times of 1 microsecond(s) . This corresponds to an opto-optical gain (fan out) of 750. The switching contrast of the optical output signal is 4.5:1.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Kneissl, Peter Kiesel, Peter Riel, K. Reingruber, Karlheinz H. Gulden, Stefan U. Dankowski, Erik Greger, A. Hoefler, Bernhard Knuepfer, Gottfried H. Doehler, X. X. Wu, and John Stephen Smith "Demonstration of extremely low switching energies using new n-i-p-i-based smart pixels", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175701
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Cited by 2 scholarly publications.
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KEYWORDS
Switching

Switches

Modulators

Diodes

Capacitance

Absorption

Electro optics

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