Magnetoluminescence and Raman study of GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barrier layers

Mitra B. Dutta; Jagadeesh Pamulapati; Peter G. Newman; L. P. Fu; Thomas Schmiedel; S. T. Lee; W. Y. Yu; Athos P. Petrou

doi:10.1117/12.175730

11 May 1994 Magnetoluminescence and Raman study of GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barrier layers

Mitra B. Dutta, Jagadeesh Pamulapati, Peter G. Newman, L. P. Fu, Thomas Schmiedel, S. T. Lee, W. Y. Yu, Athos P. Petrou

Author Affiliations +

Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175730
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We present a photoluminescence and Raman study of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. Electrons transfer from the silicon donor states associated with the AlAs X-valley minima to the GaAs wells where they form a dense quasi two-dimensional electron gas. At zero magnetic field the luminescence spectrum is broad and featureless lacking any sharp excitonic features characteristic of undoped wells. In the presence of a magnetic field applied parallel to the growth axis the luminescence exhibits a number of distinct lines that are due to interband transitions between conduction and valence band Landau levels. The Raman spectra were excited in resonance with the e₃h₃ exciton. At zero field a feature associated with the e₁ yields e₂ intersubband transition is observed. When an external magnetic field is applied, this feature evolves into a combination mode between the e₁ yields e₂ transition and the electron cyclotron resonance.

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Mitra B. Dutta, Jagadeesh Pamulapati, Peter G. Newman, L. P. Fu, Thomas Schmiedel, S. T. Lee, W. Y. Yu, and Athos P. Petrou "Magnetoluminescence and Raman study of GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barrier layers", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175730

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