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11 May 1994 Optical modulation and bistability using bulk Franz-Keldysh effect in GaAlAs-GaAsAg asymmetric Fabry-Perot device structures
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175698
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
In this paper we report novel high contrast, high reflectivity n+-AlGaAs/GaAsAl/Ag asymmetric Fabry-Perot (ASFP) optical modulators and self-electro-optic devices (SEED) using the Franz-Keldysh (FK) electroabsorption in bulk GaAlAs layer. These modulators exhibit `normally off' and `normally on' optical modulation at and below the band edge with contrast ratios in the range of 25:1 to 200:1 and reflectivities of about 30% to 50%. We show that our experimental data is consistent with a model of electroabsorption that includes unbound excitons. The FK-SEED, exhibiting contrast rations of approximately 90:1 and reflectivities of 27% at 11 V, operates based on the combined effects of negative electroabsorption and the `normally off' properties of the device. In addition to these devices operating in the 10 nm vicinity of the GaAs band gap (872 nm), we also report a high contrast modulator with Ga0.975Al0.025As FK layer operating at the standard 850 nm wavelength. These devices demonstrate the feasibility of using the bulk Franz-Keldysh effect as an alternative to quantum confined stark effects (QCSE) for efficient optical switching and modulation for many applications.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Parviz P. Tayebati, Badri N. Gomatam, and Linas Jauniskis "Optical modulation and bistability using bulk Franz-Keldysh effect in GaAlAs-GaAsAg asymmetric Fabry-Perot device structures", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175698
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