Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires

Frank Kieseling; P. Ils; M. Michel; Alfred W. B. Forchel; I. Gyuro; M. Klenk; E. Zielinski

doi:10.1117/12.176855

26 May 1994 Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires

Frank Kieseling, P. Ils, M. Michel, Alfred W. B. Forchel, I. Gyuro, M. Klenk, E. Zielinski

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176855
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have developed In_0.53Ga_0.47As/InP quantum wires with lateral widths down to 8 nm by high-resolution electron beam lithography and deep wet chemical etching. The wires were studied by cw- and time-resolved photoluminescence spectroscopy at temperatures of 2 K and 11 K respectively. Even from the narrowest obtained wire structures we observe a clear photoluminescence signal.

Citation Download Citation

Frank Kieseling, P. Ils, M. Michel, Alfred W. B. Forchel, I. Gyuro, M. Klenk, and E. Zielinski "Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176855

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