Photoreflectance study of the chemically modified (100) GaAs surface

Orest J. Glembocki; Judah Ari Tuchman; K. K. Ko; Stella W. Pang; John A. Dagata; Adriana Giordana; R. Kaplan; Charles Ed Stutz

doi:10.1117/12.176843

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26 May 1994 Photoreflectance study of the chemically modified (100) GaAs surface

Orest J. Glembocki, Judah Ari Tuchman, K. K. Ko, Stella W. Pang, John A. Dagata, Adriana Giordana, R. Kaplan, Charles Ed Stutz

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Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176843
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified 9100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl₂ plasma generated by an electro-cyclotron resonance (ECR) source and P₂S₅ chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P₂S₅ passivation produces a thin Ga rich oxide which is observed to in the Fermi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.

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Orest J. Glembocki, Judah Ari Tuchman, K. K. Ko, Stella W. Pang, John A. Dagata, Adriana Giordana, R. Kaplan, and Charles Ed Stutz "Photoreflectance study of the chemically modified (100) GaAs surface", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176843

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