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26 May 1994 Photoreflectance study of the chemically modified (100) GaAs surface
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Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified 9100) GaAs surface. For n-GaAs the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl2 plasma generated by an electro-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P2S5 passivation produces a thin Ga rich oxide which is observed to in the Fermi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Orest J. Glembocki, Judah Ari Tuchman, K. K. Ko, Stella W. Pang, John A. Dagata, Adriana Giordana, R. Kaplan, and Charles Ed Stutz "Photoreflectance study of the chemically modified (100) GaAs surface", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994);


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