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6 May 1994 Ensemble Monte Carlo simulation of Raman scattering in GaAs
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175888
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the (Gamma) conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 X 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Selim E. Guencer and David K. Ferry "Ensemble Monte Carlo simulation of Raman scattering in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175888
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