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6 May 1994 Femtosecond carrier dynamics in low-temperature-grown III-V semiconductors
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175881
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We report systematic studies of the femtosecond transient reflectivity and transmission in low- temperature-grown III-V semiconductors. By using a 2-eV-pump/white-light-probe system as well as a tunable infrared laser we are able to investigate different materials and shed new light on the processes governing the photoexcited carrier dynamics in these compounds.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Kostoulas, Ting Gong, Bradford C. Tousley, Gary W. Wicks, Paul W. Cooke, and Philippe M. Fauchet "Femtosecond carrier dynamics in low-temperature-grown III-V semiconductors", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175881
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