Laser-induced bandgap collapse in GaAs

Y. Siegal; Eli N. Glezer; Li Huang; Eric Mazur

doi:10.1117/12.175886

6 May 1994 Laser-induced bandgap collapse in GaAs

Y. Siegal, Eli N. Glezer, Li Huang, Eric Mazur

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175886
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4 eV probe photon energy and then with the 2.2 eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.

Citation Download Citation

Y. Siegal, Eli N. Glezer, Li Huang, and Eric Mazur "Laser-induced bandgap collapse in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175886

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