Modeling of distortions in optical characteristics of semiconductor lasers due to noise in MBE growth temperature measurement

Sridhar V. Iyer; Umberto Ravaioli; Albert Galick; Tom Kerkhoven

doi:10.1117/12.178505

30 June 1994 Modeling of distortions in optical characteristics of semiconductor lasers due to noise in MBE growth temperature measurement

Sridhar V. Iyer, Umberto Ravaioli, Albert Galick, Tom Kerkhoven

Author Affiliations +

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178505
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Maintaining cladding-layer material composition uniformity is inherently difficult during high temperature MBE growth of GaAs/AlGaAs laser structures. These nonuniformities can lead to asymmetrical waveguiding structures with distorted optical output characteristics of the laser. Distortions in optical characteristics can greatly affect the alignment and the coupling efficiency between laser diodes and optical fiber or other electro-optical systems in integrated optoelectronic applications. A 2D dielectric waveguide simulator has been used to analyze the optical properties of GRINSCH GaAs/AlGaAs lasers with asymmetrical cladding structures. Through this analysis, we have demonstrated an optimal laser device structure which as the desired optical characteristics and is less sensitive to cladding composition asymmetries arising in typical growth conditions.

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Sridhar V. Iyer, Umberto Ravaioli, Albert Galick, and Tom Kerkhoven "Modeling of distortions in optical characteristics of semiconductor lasers due to noise in MBE growth temperature measurement", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178505

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